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| ]HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT PRELIMINARY GA50TS120K VCES=1200V VCE(on) typ.=2.5V @VGE=15V,IC=50A Features * * * * * * * Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 s Benefits * * * * Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing Absolute Maximum Ratings VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Parameter 1200 75 50 100 100 100 20 2500 417 217 -40 to +150 -40 to +125 Max. Units V A V W o C Termal / Mechanical Characteristics RJC RJC RCS Parameter Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module Typ. 0.1 200 Max. 0.30 0.70 4.0 3.0 - Units o C/W N.m g 1 GA50TS120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter V(BR)CES VCE(ON) VGE(th) DVGE(th)DTJ gfe ICES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Ttansconductance Collector - to - Emitter Leaking Current Min. 1200 4.5 Typ. 2.5 2.7 -11 72 2.0 1.8 Max. 5.5 1.0 10 2.5 100 Units Conditions VGE=0V, IC=1mA VGE=15V, IC=50A V mV/oC S mA VGE=15V, IC=50A,TJ=125oC VCE=6V, IC=500A VCE=VGE, IC=500A VCE=25V, IC=50A VGE=0V, VCE=1200V VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current V nA IF=50A , VGE=0V IF=50A , VGE=0V ,TJ=125oC VGE=20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter Qg Qge Qgc Td(on) tr Td(off) tf Eon Eoff(1) Ets(1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Tsc Total gate charge ( turn - on ) Gate - Emitter charge ( turn - on ) Gate - Collector charge ( turn - on ) Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Turn - On Switching Energy Total Switching Energy Turn - On Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Short circuit withstand time 10 s Min. Typ. 397 67 132 100 90 287 60 10 4 14 8933 397 77 101 66 3616 999 Max. 596 100 197 20 Units nC Conditions VCC= 400V IC=60A TJ =25oC RG1 =15 , RG2 = 0 nS IC = 50A VCC=720V VGE=15V Inductor load mJ VGE = 0V pF nS A nC A/s VCC = 30V f =1MHZ IC = 50A RG1=15 RG2=0 VCC=720V di/dt=1200A/s VCC=720V, VGE=15V Min. RG1=15, VCEP=1100V 2 |
Price & Availability of GA50TS120K
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